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Material advantages of silicon carbide diodes

Generally, the most commonly used diodes are silicon-based diodes, but the more popular silicon carbide diodes are diodes using silicon carbide as the raw material. At this stage, Schottky silicon carbide diodes with high voltage are commonly seen, and their advantages: the reverse recovery characteristics are very good, which rivals Schottky silicon diodes. But it can be a high voltage diode. There are more applications in PFC. Defect: The pressure drop of the positive guidance is relatively large. One thing that is different from silicon diodes is that the on-off pressure drop increases with temperature. The early silicon carbide diodes also had the disadvantages of small inrush current and low reliability. But at this stage, there are very big improvements.
Silicon carbide raw materials are listed in the third-generation semiconductor devices by the manufacturing industry due to their outstanding characteristics. Its breakdown field strength is 10 times that of silicon and its thermal conductivity is 2.5 times that of silicon. MOS components made of silicon carbide raw materials can work in a high temperature natural environment exceeding 200 degrees. Silicon carbide diodes have very low switching losses and high frequency professional capabilities, reducing the volume and net weight of the control module, and significantly improving the system software Its high efficiency is beneficial to energy saving and emission reduction, and is widely used in new technology industries such as scenic power generation, solar power inverter power supply, UPS energy storage technology, new energy vehicles, aerospace and military industry.
Silicon carbide power modules are the key development prospects of the world's well-known companies in power engineering electronic components at this stage. Silicon carbide power modules have already completed basic applications in some high-end industries, including high-power electromagnetic energy conversion, excellent performance motor drivers, and have broad application prospects and market prospects. In the silicon carbide power module industry, the first product development is based on the hybrid power module of silicon carbide output power diode and silicon-based IGBT. The first commercial high-power module using silicon carbide diodes and silicon-based IGBTs is the PrimePACK product of Infineon.
Silicon carbide power engineering electronic components will give full play to their growing advantages in improving the utilization of electromagnetic energy and completing the miniaturization of power engineering electronic systems. Silicon carbide power engineering electronic components can improve the high efficiency of electromagnetic energy application to complete the reduction of electromagnetic energy damage. Due to the relative nature of silicon components, silicon carbide components have advantages in reducing on-off resistors and reducing switching losses. . For example, in a rectifier circuit composed of diodes and switching tubes, only the diode raw material is changed from silicon to silicon carbide, the electromagnetic energy damage of the inverter power supply can be reduced by 15-30%. If the raw material of the switching tube is also replaced with SiC, then Electromagnetic energy damage can be reduced by more than half. Power engineering electronic components made of silicon carbide have three features that enable power engineering converters to complete miniaturization: higher power switching speed, lower loss, and higher operating temperature. Silicon carbide components can switch power at multiple times the rate of silicon components. The higher the switching frequency of the power supply, the easier it is to miniaturize the energy storage technology and filter components such as inductors and capacitors; the electromagnetic energy damage is reduced, and the calorific value will be relatively reduced, thus the miniaturization of power engineering converters can be completed; and At the junction temperature level, silicon components reach the limit at 200°C, while silicon carbide components can work at a higher junction temperature and softer working temperature, so that it can be smaller or save power engineering converters. Refrigeration organization.
The above explained is the raw material advantages of silicon carbide diodes. I hope that reading it will be helpful to you. If you want to learn more about silicon carbide diodes, please feel free to consult customer service online or call our company's service hotline ( The upper right corner of the website) for consultation, we will be happy to provide you with quality service!
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