Schottky diodes are commonly known as SBDs. They are not made using the basic principles of PN junctions. They are made with metal materials as the positive stage and N-type semiconductor as the negative stage. The barriers generated on the surface of the two are used to have the characteristics of a rectifier. A semiconductor component is a hot carrier diode. Schottky diodes are mainly used as rectifier diodes, freewheeling diodes, maintenance diodes, etc. in the power supply circuit. The key is used in low-voltage, high-current power supply circuits. Medium, such as power transformer, soft starter, inverter power supply, optical fiber communication.
The Schottky diode is a metal material made of precious metals (gold, silver, aluminum, platinum, etc.) A is the positive stage, and the N-type semiconductor B is the negative stage. The potential barrier generated on the surface of the two is used as a metal material with the characteristics of a rectifier- Semiconductor components. Since there are many electronic devices in N-type semiconductors, and there are only a small amount of free charge in precious metals, the electronic devices diffuse from B with high concentration to A with low concentration.
Obviously, there is no cavitation in the metal material A, and there will be no fitness exercise that cavitation spreads from A to B. As the electronic devices continue to diffuse from B to A, the concentration of electronic devices on the surface of B slowly decreases, and the surface charge balance is destroyed, so a potential barrier is generated, and the electric field direction is B→A. However, in the effect of the electrostatic field, the electronic devices in A will also cause the drifting fitness exercise from A to B, thereby weakening the electrostatic field generated by the external diffusion fitness exercise. When a space charge zone with a certain total width is created, the electronic device drift caused by the electrostatic field and the fitness exercise caused by the difference in the concentration value of the electronic device are relatively balanced, which creates a Schottky barrier.
The typical Schottky rectifier internal power circuit structure is based on an N-type semiconductor as a substrate, and an N-epitaxial layer with arsenic as a dopant is formed on it. Anodizing uses raw materials such as molybdenum or aluminum to make a barrier layer. Use silicon dioxide (SiO2) to remove the electrostatic field in the edge area and increase the pressure resistance of the water pipe.
N-type substrate has a small on-state resistor, and its inclusion concentration is 100% higher than that of the H-layer. An N+ negative electrode layer is generated under the substrate, which has the effect of reducing the loop resistance of the negative electrode. According to the main parameters of the optimized structure, a Schottky barrier is generated between the N-type substrate and the anodized metal material, as shown in the figure below. When forward bias is applied on both sides of the Schottky barrier (positive level for anodized metal material and negative level for the N-type substrate), the Schottky barrier layer becomes smaller and its internal resistance decreases; on the contrary, , If the reverse bias is applied on both sides of the Schottky barrier, the Schottky barrier layer becomes larger and its internal resistance increases.
The above explained is the application of Schottky diodes in the circuit, I hope it will be helpful to you after reading it. If you want to know more about Schottky diodes, please contact customer service online or call this Company service hotline (upper right corner of the website) for consultation, we will wholeheartedly provide you with quality service!