Silicon carbide diode is a revolutionary material suitable for power semiconductors, and its physical properties are far superior to silicon power devices. Key features include benchmark switching performance, no reverse recovery current, temperature has almost no effect on switching behavior, and the standard operating temperature range is -55°C to 175°C. The silicon carbide diode adopts the junction barrier Schottky diode structure (JBS), which can effectively reduce the reverse leakage current and has good high voltage resistance.
Silicon carbide diodes are superior to ordinary bipolar diode technology. Silicon carbide diodes switch between on and off states very quickly, and there is no reverse recovery current when switching with ordinary bipolar diode technology. After eliminating the reverse recovery current effect, the energy consumption of the silicon carbide diode is reduced by 70%, and it can maintain high energy efficiency in a wide temperature range, which improves the flexibility of designers to optimize the operating frequency of the system.
The silicon carbide diode has passed the automotive-grade product test, and its polarity ground voltage is increased to 650V, which can meet the requirements of designers and car manufacturers to reduce the voltage compensation coefficient, thereby ensuring that the nominal voltage of the on-board charging semiconductor component is between the nominal voltage and the instantaneous peak voltage There is sufficient safety margin. Diode dual-tube products can maximize the use of space and reduce the weight of car chargers.
Silicon carbide can be used for extremely fast switching, high frequency operation, zero recovery and temperature-independent behavior. Using our low inductance rapid prototyping package, these silicon carbide diodes can be used in any number of fast switching diode circuits or high frequency converters. Silicon carbide diodes: Heavy-duty motors and industrial equipment are mainly used in high-frequency power converters, with the advantages of high efficiency, high power and high frequency.
Silicon carbide diodes are unipolar devices, so compared with traditional silicon fast recovery diodes (silicon FRD), silicon carbide diodes have ideal reverse recovery characteristics. When the device is switched from the forward direction to the reverse blocking direction, there is almost no reverse recovery power, the reverse recovery time is less than 20ns, and even the reverse recovery time of the 600V10A silicon carbide diode is less than 10ns. Therefore, the silicon carbide diode can work at a higher frequency and has higher efficiency at the same frequency. Another important feature is that the silicon carbide diode has a positive temperature coefficient, and the resistance gradually increases as the temperature rises, which is just the opposite of the silicon FRD. This makes silicon carbide diodes suitable for parallel connection and increases the safety and reliability of the system.
The above explanations are the main features of silicon carbide diodes. I hope that reading it will be helpful to you. If you want to know more about silicon carbide diodes, please feel free to consult customer service online or call our company's service hotline (Upper right corner of the website) For consultation, we will be happy to provide you with quality service!