Silicon carbide was discovered as early as 1842, but because of the high degree of difficulty of the processing technology when it was made, and the low output rate of components, the price was high, which jeopardized its use. Until 1955, the way to grow and develop high-quality silicon carbide promoted the development of silicon carbide diode raw materials, and was used in aerospace, airlines, radar detection, and nuclear power generation development and design industries. In the 1980s, the SiC produced by commercialization entered the sales market and was used in the exploration of crude oil floor heating, the development and design of inverter air conditioners, the use of flat-panel TVs and the conversion of solar power.
The emergence of silicon carbide diodes has greatly improved the characteristics of integrated circuit technology, considering the needs of social economy and national defense construction. At this stage, capitalist countries such as the United Kingdom, France, Germany, and Japan are vying to invest heavily in silicon carbide raw materials and Scientific research on components. The US Department of Defense has just begun to apply scientific research on silicon carbide power electronic devices in the 1990s. In 1991, it succeeded in scientific research and developed a Schottky diode with a blocking voltage of 400V.
Silicon carbide diodes became the first socialized silicon carbide power engineering electronic components in the early 21st century. The SiCSBD (working at 100A, 600V, 300°C) developed by Semisouth in the United Kingdom has long been used in the Royal Air Force multi-electric airport. The power module composed of silicon carbide SBD can be applied under extreme standards such as high temperature, high pressure, and strong radiation source. At this stage, the product series whose working voltage reaches 1200V in the opposite direction is blocked, and its rated voltage can reach 20A. The product research and development of silicon carbide SBD has already reached the level of high-voltage components. Its blocking working voltage exceeds 10,000V, and the on-state current of high-current components reaches 130A.
The breakdown field strength of the silicon carbide diode is very high, the power switch speed is fast, the net weight is very light, and the volume is not large. It has more advantages for the main purpose of ballasts above 3KV. In 2001, Cree developed a 19.5KV cabinet countertop PiN diode. At the same stage, Japan’s Sugawara research laboratory also scientifically developed a 12KV cabinet countertop PiN diode. In 2006, Cree reported on 10KV, 3.75V, 50A SiCPiN diodes, and its 10KV/20APiN diode series products had achieved a compliance rate of 40%.
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