Silicon carbide material is listed as the third-generation semiconductor material in the industry due to its excellent performance. Its breakdown field strength is 10 times that of silicon, and its thermal conductivity is 2.5 times that of silicon. The silicon carbide diode made of silicon carbide material can work in a high temperature environment of more than 200 degrees, has extremely low switching loss and high-frequency working ability, reduces the volume and weight of the module, and significantly improves the efficiency of the system. Conducive to energy saving and consumption reduction, it is widely used in high-tech fields such as wind and solar power generation, photovoltaic inverters, uninterruptible power supply energy storage, new energy vehicles, aerospace and military.
Silicon carbide diodes are used in many fields of power electronic devices, such as power transmission systems, power distribution systems, electric locomotives, hybrid electric vehicles, various industrial motors, photovoltaic inverters, wind grid-connected inverters, air conditioners and other white goods , Servers and personal computers. Silicon carbide devices will gradually show their advantages in performance and system cost reduction.
Silicon carbide diode has high thermal conductivity, which can effectively improve power density. The higher the thermal conductivity, the stronger the ability of the material to transfer heat to the environment, and the smaller the temperature rise of the device, the more conducive to improving the power density of the power device, so it is more suitable for working in a high temperature environment. The recovery time of the silicon carbide diode is short, and the temperature has little effect on the switching behavior. The standard operating temperature range is -55℃-175℃, which is more stable and greatly reduces the requirements for the radiator.
Silicon carbide diodes can be used in switching power supplies, with extremely fast switching speed, high frequency operation, zero recovery and temperature-independent characteristics, and our low inductance RP package. These diodes can be used in any number of fast switching diode circuits or high frequency converters. Silicon carbide diodes are mainly used in high-frequency power converters for heavy-duty motors and industrial equipment, and have the advantages of high efficiency, high power and high frequency. Silicon carbide diodes are also superior to PN junction devices because they have low forward conduction voltage and low conduction losses. Silicon carbide diodes also have two disadvantages. First, the reverse withstand voltage VR is relatively low, usually only about 100 volts; second, the reverse leakage current IR is relatively large.
What has been explained above is the excellent performance of silicon carbide diodes. I hope that reading it will be helpful to you. If you want to know more about silicon carbide diodes, please feel free to consult customer service online or call our company’s service hotline ( The upper right corner of the website) for consultation, we will be happy to provide you with quality service!