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Greenstar Electronics MOSFET DG-FET™ Metal Oxide Half-Field Effect Transistor Process Introduction

Introduction: Greenstar Electronics' power components can achieve higher efficiency, power density and cost-effectiveness in various power supply and motor drive applications. The DG-FET™ and SuperTrench™ product portfolio covers 20V to 200V specifications, which can simultaneously solve the problems of low switching frequency and high switching frequency.

DG-FET介紹

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Modern technology has an increasing demand for computing power, and mainstream trends such as cloud computing, the Internet of Things, and social media have played a role in fueling the flames. As a result, energy consumption has greatly increased, and the power conversion chain therefore requires higher energy efficiency.
 
The new generation of DG-FET™ has a lower quality factor (FOM: RDS(on)×QG) than other similar components. The technology adopted can greatly reduce the conduction loss and switching loss in system design.

The RDS(on) (on-resistance) of the DG-FET™ element is at least 50% lower than other similar elements, that is, the lowest power loss can be achieved in high current applications. Its gate charge (Qg) is 65% less than other devices, which is the lowest of similar components. It can achieve the advantages of low power consumption and fast switching in switching applications such as isolated DC/DC converters in telecommunication equipment.Schottky diode supplier

Compared with traditional trench MOS:
 
DG-FET™, which subverts traditional MOSFET technology, uses an additional polysilicon gate to achieve charge balance. By the way of charge balance, the electric field of the depletion region of the original MOSFET will change from one-dimensional charge to two-dimensional charge distribution.
 
Therefore, its breakdown voltage will be higher than that of a traditional trench MOSFET.

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If DG-FET™ is compared with today's traditional trench MOSFET, it is a device with the same breakdown voltage, but DG-FET™ can further reduce the resistance of the epitaxial layer, and thus can obtain a lower on-resistance.

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In addition, because the switching noise is lower, the use of DG-FET™ technology can also effectively reduce the drain charge.

 

Summary of Silicongear DG-FET™ and Trench Key Parameter MOSFET

1-MOSFET Gate adds 2.2nF to test the secondary driving voltage of the startup state:
       SX088R06VT 1.86V VS. DG100N03S 0.84V
2-The rising slope of the secondary drive voltage will decrease as the capacitance of the SR-Gate capacitance to ground increases. (Affect switching loss)
3-Efficiency
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4-Temperature SX088R06 97.5 degree DG100N03S 89.2 degree
 
product comparison:
●Lower on-resistance: RDS(ON) at Vgs=10V, 7mΩ vs. 10mΩ
● Smaller chip size improves competitive advantage
● Lower internal parasitic charge, thereby creating better switching efficiency
● Small and thin package: PDFN 3.3x3.3-8L

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Summary: Greenstar MOSFET and DG-FET series have high-speed switching speed and the industry's excellent Ron-Crss performance.
 
Due to the cushioning effect, the DG-FET series can suppress noise and ringing more effectively than the SuperTrench series. RDS (on) on-resistance is at least 50% lower than other similar components, and gate charge (Qg) is 50% lower than other devices.
 
The DG-FET™ and SuperTrench™ product portfolio covers 20V to 200V specifications, which can simultaneously solve the problems of low switching frequency and high switching frequency.
 

 

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