Silicon carbide diodes can work at higher frequencies and have higher efficiency at the same frequency. In addition, silicon carbide diodes also have a positive temperature coefficient, and the resistance gradually increases with increasing temperature, which is the opposite of silicon FRD. This makes silicon carbide diodes very suitable for parallel connection and improves the safety and reliability of the system. Silicon carbide diode is an ideal device that integrates high voltage, high speed, low power consumption and high temperature resistance. At present, a variety of silicon carbide devices have been successfully developed in the world. As a zero recovery diode, silicon carbide SBD greatly improves the high frequency power supply circuit. The unique high temperature characteristics of silicon carbide diodes make them have potential advantages in power applications under high temperature environments.
Silicon carbide diodes are more like ideal switches than PN junction devices. The two most important performance indicators of Schottky diodes are their low reverse recovery charge (Qrr) and recovery softening coefficient. Silicon carbide diodes are also superior to PN junction devices because they have low forward conduction voltage and low conduction losses. Silicon carbide diodes also have two disadvantages. First, the reverse withstand voltage VR is relatively low, usually only about 100 volts; second, the reverse leakage current IR is relatively large.
The recovery time of the silicon carbide diode is short, and the temperature has little effect on the switching behavior. The standard operating temperature range is -55℃-175℃, which is more stable and greatly reduces the requirements for the radiator. The main advantages of silicon carbide diodes are extremely fast switching speeds and no reverse recovery current. Compared with silicon devices, it can greatly reduce switching losses and achieve excellent energy efficiency. Faster switching speeds also enable manufacturers to reduce the size of electromagnetic coils and related passive components, thereby improving assembly efficiency, reducing system weight and reducing material costs.
Silicon carbide diodes have high thermal conductivity and can effectively increase power density. The higher the thermal conductivity, the stronger the ability of the material to transfer heat to the environment, and the smaller the temperature rise of the device, the more conducive to improving the power density of the power device, so it is more suitable for working in a high temperature environment. The high breakdown field strength of the silicon carbide diode improves the withstand voltage and reduces the size, and the high electron breakdown field strength improves the breakdown voltage of the semiconductor power device. At the same time, due to the increase of the electron breakdown field strength, the bandwidth of the drift region of the silicon carbide diode power device can be reduced when the impurity penetration density is increased, thereby reducing the size of the power device.
The above explanation is the introduction to the functions of silicon carbide diodes. I hope it will be helpful to you after reading it. If you want to know more about silicon carbide diodes, please contact customer service online or call our company's service hotline ( The upper right corner of the website) for consultation, we will be happy to provide you with quality service!