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The main features and principles of Schottky diodes

Schottky diodes are a kind of semi-conductor devices, made of precious metals (gold, silver, aluminum, platinum, etc.). ) A is used as the positive electrode, and the N-type semiconductor B is used as the negative electrode, and uses the rectifying characteristics of the barrier formed on the contact surface of the two. Schottky diodes have a low reverse breakdown voltage: SBD's reverse breakdown voltage is relatively low, because its reverse barrier is thinner and the surface is easily broken down. Because SBD is more prone to thermal breakdown than PN junction diode, the reverse leakage current is larger than PN junction diode.
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The forward voltage of the Schottky diode decreases: Since the Schottky barrier height is lower than the PN junction barrier height, its forward conduction mosfet and forward voltage drop are lower than the PN junction diode (about 0.2V lower). Schottky diodes have a high operating frequency: due to the small storage effect of minority carriers in Schottky diodes, its frequency response is only limited by the RC time constant, so it is an ideal device for high-frequency fast switching. Its operating frequency can reach 100 gigahertz.
Schottky diode has a fast reverse recovery time: because SBD is a majority carrier conduction device, there is no minority carrier lifetime and reverse recovery issues. The reverse recovery time of the SBD is only the charge and discharge time of the Schottky barrier capacitor, which is completely different from the reverse recovery time of the PN junction diode. Since the reverse recovery charge of SBD is very small, the switching speed is very fast, and the switching loss is very small, which is especially suitable for high frequency applications.
Schottky diodes are mainly used as high frequency, low voltage, high current rectifier diodes, freewheeling diodes and protection diodes, as well as rectifier diodes and small signal detection diodes in microwave communication circuits. It is often used for secondary power rectification and high-frequency power rectification of color TVs.
The basic principle of    Schottky diode is: On the contact surface between metal and N-type silicon wafer, the current is controlled by the barrier formed by the contact between metal and semiconductor. The rectification principle of Schottky junction and PN junction is fundamentally different. Its withstand voltage is only about 40V, mostly not higher than 60V, which limits its application range. Its characteristics are: the switching speed is very fast: the reverse recovery time is particularly short. Therefore, switching diodes and low-voltage high-current rectifier diodes can be manufactured.
The above explained are the main features and principles of Schottky diodes. I hope that after reading it, it will be helpful to you. If you want to know more about Schottky diodes, please feel free to consult customer service online or call this Company service hotline for consultation, we will wholeheartedly provide you with quality service!


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